Triode/MOS tube/transistor/module
Infineon (Infineon)
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SILAN (Silan Micro)
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Infineon (Infineon)
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N+P dual channel, 20V/2.4A(-20V/-1.7A)
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Configuration Single Type N-Ch VDS(V) 72 VGS(V) 20 ID(A)Max. 84 VGS(th)(v) - RDS(ON)(m?)@4.490V - Qg(nC)@4.5V - QgS(nC) 18 Qgd(nC) 28 Ciss(pF) 3150 Coss(pF) 300 Crss(pF) 240
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CBI (Creation Foundation)
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P channel -30V -4.2A
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JSMSEMI (Jiesheng Micro)
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DIODES (US and Taiwan)
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N-channel, 100V, 11A, 180mΩ@10V
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DIODES (US and Taiwan)
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MATSUKI (pine wood)
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DIODES (US and Taiwan)
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This N-channel JFET device is suitable for analog switch and chopper applications.
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This N-channel JFET device is suitable for analog switch and chopper applications.
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The MJB42C is a 100 V, PNP bipolar complementary power transistor. Complementary NPN is MJB41C.
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BORN (Born Semiconductor)
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