Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 8A Power (Pd): 2W On-Resistance (RDS(on)@Vgs,Id): 28mΩ@10V,5A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 19nC@10V Input capacitance (Ciss@Vds): 1.058nF@30V, Vds=60V Id=8A Rds=28mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.6A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 20mΩ@10V, 5.6A Threshold voltage (Vgs(th)@Id): 0.9V@250uA Gate charge (Qg@Vgs): 17nC@10V Input capacitance (Ciss@Vds): 0.63nF@15V , Vds=30V Id=5.6A Rds=20mΩ , Working temperature: -55℃~+150℃@(Tj);

PNP-pre-biased

N-channel, 600V, 12A, 650mΩ@10V

N channel

NPN 150W 230V 15A Applications: power amplifier applications Recommended for 120W high-fidelity audio amplifier output stage applications