Triode/MOS tube/transistor/module

40V, N-Channel NexFET™ Power MOSFET, CSD18509Q5B 8-VSON-CLIP -55 to 150

NPN, Vceo=50V, Ic=150mA, hfe=120~270

This power MOSFET has low on-resistance. This device is suitable for applications such as power switches in portable equipment. Best suited for 1 to 2 cell Li-ion battery applications.

Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 3.8A Power (Pd): 278MW On-resistance (RDS(on)

N-Channel, Logic Level, UltraFET Power MOSFET, 100V, 10A, 165mΩ

Type NPN IC(A) 0.2 VCBO(V) 60 VCEO(V) 40 VEBO(V) 6 VCE(sat)(V) 0.3