Triode/MOS tube/transistor/module

Type N VDS(V) 60V VGS(V) ±20V Vth(V) 3V RDS(ON)(mΩ) 7.5mΩ ID(A) 80A

P-channel MOS -40V -13A 11 milliohms

Continuous drain current (Id) (at 25°C): 5.5A, drain-source voltage (Vdss): 20V, gate-source threshold voltage: 0.45~1V@ 250uA, drain-source on-resistance: <28mΩ @Vgs= 4.5V <35mΩ @Vgs=2.5V, maximum power dissipation (Ta=25°C): 1W, type: 5.5A/20V Nch

N-channel, 900V, 2.2A, 7.2Ω@10V