Triode/MOS tube/transistor/module
Convert Semiconductor
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Convert Semiconductor
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.7-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60
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NCE (Wuxi New Clean Energy)
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This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
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This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
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GOODWORK (Good Work)
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Infineon (Infineon)
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N-channel, 600V, 6.7A, 650mΩ@10V
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DIODES (US and Taiwan)
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P-channel, -20V, -3.6A, 35mΩ@-4.5V
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.4-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 80
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N-channel, 30V, 30A, 0.003Ω@10V
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