Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@150mA, 2V Characteristic frequency (fT): 100MHz

PNP, Vceo=-40V, Ic=-600mA, hfe=20~300

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 330mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 290@2mA, 5V Characteristic frequency (fT): 250MHz Operating temperature: +150℃@(Tj)

N-channel, 40V, 120A, 2.7mΩ@10V