Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) 1.8 RDS(ON)(m?)@4.487V 19 Qg(nC)@4.5V 19.3 QgS(nC) 7.1 Qgd(nC) 7.6 Ciss(pF) 2426 Coss(pF) 145 Crss(pF) 97

NPN, Vceo=25V, Ic=1.5A, hfe=200~350, silk screen Y1

-

P-channel, -40V, -110A, 0.0042Ω@-10V

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.