Triode/MOS tube/transistor/module

P-Channel 350V 0.2A 30Ω

N-channel, 900V, 4A, 4.2Ω@10V

N channel

PNP, Vceo=-30V, Ic=-0.1A, hfe=420~800, silk screen 3L

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.