Triode/MOS tube/transistor/module

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P channel -30V -11A

Power MOSFET, 30 V, 7.8 A, ?Cool, single N-channel, 2x2 mm, WDFN encapsulation

Field Effect Transistor (MOSFET) Type: One N-channel and one P-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 7A/-6A Power (Pd): 2.5W On-resistance (RDS(on )@Vgs, Id: 100mΩ@10V, 6A/240mΩ@-10V, -6A Threshold voltage (Vgs(th)@Id): 1.6A@250uA/-1.6A@250uA Gate charge (Qg@Vgs) 25.4nC @10V/33nC@10V Input capacitance (Ciss@Vds): 0.999nF@50V/1.6nF@50V, Vds=100v Id=7A/-6A Rds=100mΩ/240mΩ, working temperature: -55℃~+150℃@ (Tj)

200V/24A N channel