Triode/MOS tube/transistor/module

N-channel, 30V, 100A, 3mΩ@10V

FET Type: P-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 30A On-resistance (RDS(on)@Vgs,Id): 61mΩ@10V,30A

IGBT module

N-channel, 600V, 12A, 570mΩ@10V

High current 500mA 30V six-way Darlington drive circuit; the circuit integrates a 78L05 three-terminal voltage regulator

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

30V/5.8A/N channel

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VCES(V) 650 IC(A)@136℃ 15 VCE(sat)(V) 1.5 E(off)(mj) 0.09 Vf(V) 1.8

N-channel, 20V, 6A, 28mΩ@4.5V