Triode/MOS tube/transistor/module
This PNP bipolar power transistor is suitable for high power amplifier and switching amplifier applications. 2N3055 (NPN) and MJ2955 (PNP) are complementary devices.
설명하다
HXY MOSFET (Huaxuanyang Electronics)
제조업 자
N+N channel, VDSS withstand voltage 20V, ID current 5A, RDON on-resistance 23mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.5-1.2V,
설명하다
DIODES (US and Taiwan)
제조업 자
SINO-IC (Coslight Core)
제조업 자
This NPN bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
설명하다
Infineon (Infineon)
제조업 자
N-channel, 60V, 45A, 5.7mΩ@10V
설명하다
Infineon (Infineon)
제조업 자