Triode/MOS tube/transistor/module

N-Channel Power Trench MOSFET 40V, 50A, 8.7mΩ

N channel

Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 7.2 VGS(th)(v) 0.6 RDS(ON)(m?)@4.117V 16 Qg(nC)@ 4.5V 13 QgS(nC) 1.5 Qgd(nC) 1.8 Ciss(pF) 610 Coss(pF) 140 Crss(pF) 130

VDMOS single tube

P channel -20V -0.66A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220F, N channel, withstand voltage: 450V, current: 13A, 10V internal resistance (Max): 0.46Ω, power: 40W

NPN transistor, HFE:300-600, 100mA Vce=45V