Triode/MOS tube/transistor/module
Convert Semiconductor
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Convert Semiconductor
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HXY MOSFET (Huaxuanyang Electronics)
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IC(A) -0.5 VCEO(V) -25 hFE(β) 120-400 fT(MHZ) 150 VCBO(V) -40 VCE(sat)(W) -0.6 Type PNP
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N-channel, 60V, 130A, 5.4mΩ@10V
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MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.45-1 On-Resistance RDS(ON) (mΩ) 16/20 Continuous Drain Current ID (A) 7
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Infineon (Infineon)
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N-channel, 150V, 85A, 15mΩ@10V
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TWGMC (Taiwan Dijia)
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Drain-source voltage (Vdss): 60V Continuous drain current (Id): 110A Power (Pd): 83W On-resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,20A
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GOFORD (valley peak)
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DIODES (US and Taiwan)
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N-type MOS tube@@VDS20V,ID7ARDS(on),Typ@VGS=4.5V16mR
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This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
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This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
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Ultra high voltage MOS tube
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N-channel, 20V, 3A, 55mΩ@4.5V
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SPTECH (Shenzhen Quality Super)
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Cmos (Guangdong Field Effect Semiconductor)
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This high voltage PNP bipolar transistor is suitable for general switching applications.
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