Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-150mA, hfe=200~400

Gear: 100-300

This NPN bipolar transistor is suitable for audio amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-89, N channel, withstand voltage: 30V, current: 8A, 10V internal resistance (Max): 0.025Ω, 4.5V internal resistance (Max): 0.05Ω, power: 4W

P-channel, -45V, -230mA, 14Ω@-10V

Type: P-channel Drain-source voltage (Vdss): -20V Continuous drain current (Id): -4.5A Power (Pd): 1.5W On-resistance (RDS(on)

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW