Triode/MOS tube/transistor/module

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N-channel 650V 7A

Type N VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS96°C(A) 36 RDS(Max) 42 PD96°C(W) 80

N-channel, 600V, 4A, 1.8Ω@10V

MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 28/32 Continuous Drain Current ID (A) 20

Dual N-channel, 20V, 1.5A

N-channel, 60V, 50A, 11mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 170A Power (Pd): 167W On-Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate Charge (Qg@Vgs): 59.5nC@10V Input Capacitance (Ciss@Vds): 3.1nF@50V , Vds=85V Id=170A Rds=2.8mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

Type PNP IC(A) -0.1 VCBO(V) -50 VCEO(V) -45 VEBO(V) -5 VCE(sat)(V) -0.5

This device includes two 40V N-channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) encapsulation. The encapsulation has been improved for excellent thermal performance.