Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 0.18 VGS(th)(v) - RDS(ON)(m?)@4.30V 3 Qg(nC)@4.5V - QgS(nC) - Qgd(nC) - Ciss(pF) 18 Coss(pF) 12 Crss(pF) 7.6

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 650V, ID current 2A, RDON on-resistance 5R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V

Produced using an advanced Power Trench process, this N-channel MOSFET is optimized for rDS(on), switching performance, and robustness.

This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. These MOSFETs switch faster and have lower gate charge than other MOSFETs with comparable RDS(ON) specifications. As a result, the MOSFET is easier to drive, safer (even at very high frequencies), and the overall efficiency of the DC/DC power supply design is higher.

N-channel, 75V, 80A, 9mΩ@10V

N channel

N-channel, 700V, 12A, 1Ω@10V