Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) 1.8 RDS(ON)(m?)@4.377V 12 Qg(nC)@4.5V 9 QgS(nC) 4.5 Qgd(nC) 7.5 Ciss(pF) 1896 Coss(pF) 125 Crss(pF) 89

Semiconductor Transistor Field Effect Transistor COOLMOS, TO-220F, N-channel, withstand voltage: 800V, current: 11A, 10V internal resistance (Max): 0.4Ω, power: 35W

VCES(V) 1200 IC(A)@175℃ 25 VCE(sat)(V) 1.65 E(off)(mj) 0.75 Vf(V) 3

Type: N+P channel, N channel: Drain-source voltage (Vdss): 40V Continuous drain current (Id): 7.2A On-resistance (RDS(on)@Vgs,Id) 20mΩ@10V, 28mΩ@4.5V , Threshold voltage (Vgs(th)@Id): 1.0V to 2.5V VDS=VGS,ID=250μA, P circuit: Drain-source voltage (Vdss): -40V Continuous drain current (Id): -6.5A ON Resistance (RDS(on)@Vgs,Id): 45mΩ@-10V, 80mΩ/@-4.5V , Threshold voltage (Vgs(th)@Id): -1.2V to -2.5V VDS=VGS,ID=250μA,