Triode/MOS tube/transistor/module

VCES(V) 1200 Ic@TC=100℃(A) 40 PD@TC=25℃(W) 417 VF Typ.@TC=25℃(V) 2.6 VCE(sat)(V)@TC=25℃ 2

For UPS, photovoltaic inverter, welding machine VCE=1200V Ic=25A Ptot=278W high switching frequency to replace Silan ST Magnachip infineon 25N12000 25A 1200V half current IGBT 25T120; fully compatible with BT25T120CKD C2897743, IGF25T120D

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 40 VGS(th)(v) 1.5 RDS(ON)(m?)@4.394V 17.4 Qg(nC)@4.5V - QgS(nC) 2.8 Qgd(nC) 4.1 Ciss(pF) 1003.9 Coss(pF) 185.4 Crss(pF) 9.8

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

PNP, Vceo=-25V, Ic=-500mA, silk screen: 2T1

This device is intended for use in general-purpose amplifiers and switches requiring up to 500 mA collector current. From Process 63.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.