Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching motor control applications. The MJH6284 (NPN) and MJH6287 (PNP) are complementary devices.
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SPS (American source core)
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P-MOS -60V -4A SOP-8 100mΩ@-10V
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Ruichips (Ruijun Semiconductor)
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N-channel, 80V, 190A, 4.8mΩ@10V
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Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -35 VGS(th)(v) -1.7 RDS(ON)(m?)@4.518V - Qg(nC) @4.5V - QgS(nC) 9 Qgd(nC) 6 Ciss(pF) 3029 Coss(pF) 129 Crss(pF) 76
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Infineon (Infineon)
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SPTECH (Shenzhen Quality Super)
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NPN 40W 230V 1A Applications: Power amplifier applications. ·Application of driver stage amplifier
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This N-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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SILAN (Silan Micro)
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CJ (Jiangsu Changdian/Changjing)
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