Triode/MOS tube/transistor/module

Ultra high voltage MOS tube

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 15nA DC Current Gain (hFE@Ic,Vce): 420 @2mA,5V Operating temperature: -55℃~+150℃@(Tj)

Type N VDS(V) 30V VGS(V) ±12V Vth(V) 1.5V RDS(ON)(mΩ) 28mΩ ID(A) 6.8A

PNP, Vceo=-45V, Ic=-500mA, hfe=160~400

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Chip Transistor Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 1W DC current gain (hFE@Ic,Vce): 30@20mA, 2V

N-channel, 55V, 29A, 40mΩ@10V