Triode/MOS tube/transistor/module

P channel -40V -33A

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V

Two-way triode with built-in resistor

NPN

Semiconductor Transistor Field Effect Transistor MOS tube, TO-247, N channel, withstand voltage: 300V, current: 90A, 10V internal resistance (Max): 0.046Ω, power: 610W

Configuration Single Type N-Ch VDS(V) 120 VGS(V) 20 ID(A)Max. 70 VGS(th)(v) - RDS(ON)(m?)@4.223V 18 Qg(nC)@4.5V - QgS(nC) 5.6 Qgd(nC) 7.2 Ciss(pF) 2640 Coss(pF) 330 Crss(pF) 11

NPN, Vceo=400V, Ic=200mA, hfe=100~200

Integrated PNP transistor and MOS tube