Triode/MOS tube/transistor/module

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Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.1A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 60mΩ@10V, 4.1A Threshold voltage (Vgs(th)@Id): 1.4V@250uA Input capacitance (Ciss@Vds): 650pF@15V Reverse transfer capacitance (Crss@Vds): 65pF@15V Operating temperature: -55℃~+150℃@ (Tj)

NPN 45V 500mA 250-600 SOT-23

N-channel, 100V, 25A, 35mΩ@10V

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) - RDS(ON)(m?)@4.397V 12 Qg(nC)@4.5V - QgS(nC) 6 Qgd(nC) 6.8 Ciss(pF) 1999 Coss(pF) 322 Crss(pF) 7.1

Semiconductor Transistor Field Effect Transistor MOS tube, TO-251A, N channel, withstand voltage: 100V, current: 18A, 10V internal resistance (Max): 0.085Ω, 4.5V internal resistance (Max): 0.12Ω, power: 75W

N-channel, 650V, 4A