Triode/MOS tube/transistor/module

N-channel, 700V, 10A, 880mΩ@10V

ON Semiconductor's new Field Stop Gen 3 IGBT series features a new field stop IGBT technology that provides optimal performance.

SGT MOS, Vds=110V, Rdson=4.2mΩ, TO220, widely used in various high-frequency power supply industries.

N-channel, 30V, 78A, 4.8mΩ@10V

PNP, 50V, 3A, TO252

The input level is compatible with TTL, PMOS or CMOS input, and the parameters of the 6V~15V input range are optimized

Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.