Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
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ElecSuper (Jingxin Micro)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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N-channel, 600V, 20A, 165mΩ@10V
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Sinopower (large and medium)
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Sinopower (large and medium)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -25V Collector Current (Ic): -500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE( sat)@Ic,Ib): 600mV@500mA HFE: 200-350
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This 8A 80 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications.
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GOODWORK (Good Work)
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TWGMC (Taiwan Dijia)
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Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Collector current (Ic): 100mA Collector-emitter breakdown voltage (Vceo): 50V NPN, Vcc=50V, Io=100mA, Pd=200mW
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DIODES (US and Taiwan)
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BLUE ROCKET (blue arrow)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=25V, Ic=500mA, silk screen: J3
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Infineon (Infineon)
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