Triode/MOS tube/transistor/module

P-channel, 30V, 3.2A, 78mΩ@10V

NPN, Vceo=30V, Ic=20mA, hfe=100~200, silk screen QY

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW 200~450 NPN, Vceo=65V, Ic=0.1

PNP transistor + N channel MOSFET

NMOS, 75V/210A, RDS(ON)=3mR; the nominal 48V battery is dedicated for brushless controllers (for electric picks, high cost performance).

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.

MOS, TO-252, N-channel, 30V, 70A, 4mΩ (Max), 65W