Triode/MOS tube/transistor/module

N-channel, 800V, 11A, 450mΩ@10V

The FJD5555 is a 1050 V 5 A NPN silicon epitaxial planar transistor. Suitable for high-speed switching applications, the FJD5555 features industry-standard surface-mount TO-252 (DPAK) encapsulation, providing design flexibility and excellent power dissipation performance.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 200mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@10mA, 1V PNP,Vceo=- 160V,Ic=-1A,hfe=160~320

N channel

MOS, TO-220, N-channel, 300V, 14A, 290mΩ (Max), 140W