Triode/MOS tube/transistor/module
Taiwan Semiconductor
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher performance. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.
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CJ (Jiangsu Changdian/Changjing)
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Infineon (Infineon)
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MICROCHIP (US Microchip)
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ST (STMicroelectronics)
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Sinopower (large and medium)
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Infineon (Infineon)
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SPTECH (Shenzhen Quality Super)
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CRMICRO (China Resources Micro)
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Gate trigger voltage: 1.3V; Gate trigger current: 50mA; Type: Triac; On-state current (It (AV)) (Max): 40A; On-state current (It (RMS)) (Max) - ;Off-state voltage Vdrm: 800V
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