Triode/MOS tube/transistor/module

N-channel, 30V, 5.8A

P-channel, -20V, -3.5A, 55mΩ@-4.5V

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 8 ID(A)Max. 1.4 VGS(th)(v) 0.6 RDS(ON)(m?)@4.6V 140 Qg(nC)@4.5V 3.3 QgS(nC) 0.51 Qgd(nC) 0.88 Ciss(pF) 204 Coss(pF) 43.6 Crss(pF) 30

Semiconductor transistor field effect transistor MOS tube, SOP-8, P channel, withstand voltage: -30V, current: -18A, 10V internal resistance (Max): 0.012Ω, 4.5V internal resistance (Max): 0.02Ω, power: 3W

VO=-50V;IO=-100mA PNP built-in bias resistor

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 5A, RDON on-resistance 40mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.2V,

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 200V, 56A, 40mΩ@10V

PNP