Triode/MOS tube/transistor/module

MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±8 Vth(V) 0.4-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 0.7

N channel

CSD17578Q5A 30 V N-Channel NexFET™ Power MOSFET 8-VSONP

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 80 VGS(th)(v) 3 RDS(ON)(m?)@4.213V - Qg(nC)@4.5V - QgS(nC) 17 Qgd(nC) 12 Ciss(pF) 2680 Coss(pF) 386 Crss(pF) 160

P-channel, -200V, -3A, 200mΩ@10V

Automotive power MOSFETs for low power applications. -60V -2.9A, 111 Ω, single P-channel, TSOP-6, logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

These devices are N-channel enhancement-mode silicon-gate field-effect transistors designed for logic-level (5V) drive power in applications such as programmable controllers, automotive switches, and electromagnetic drives. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus enabling true switching power supply control directly in the logic circuit supply voltage. The previous development model was TA09526.

N-channel, 40V, 55A, 13mΩ@10V