Triode/MOS tube/transistor/module

The FJPF2145 is a low-cost, high-performance power switch that provides optimum performance when used in ESBC configurations for applications such as power supplies, motor drives, smart grids, or ignition switches. The power switch can operate up to 1100 V and 5 A while offering exceptionally low on-resistance and very low switching losses. ESBC switches can be actuated by off-the-shelf power controllers or drivers. The ESBC MOSFET is a low voltage, low cost, surface mount device that combines low input capacitance and fast switching. The ESBC configuration further minimizes the required drive power because it has no Miller capacitance. The FJPF2145 has a square reverse biased safe operating area (RBSOA) and a rugged design, thus providing excellent reliability and a large operating range. The device is avalanche rated and has no parasitic transistors, so it is not prone to static dv/dt failure. The power switch is produced using a proprietary high voltage bipolar process using a high voltage TO-220F encapsulation.

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

This bipolar power transistor is suitable for general purpose amplifier and switching applications. Compact TO-220 AB encapsulation. TIP29, A, B, C (NPN) and TIP30, A, B, C (PNP) are complementary devices.

PNP 40V 0.2A