Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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N-channel, 60V, 270mA, 5Ω@10V
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ST (STMicroelectronics)
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N-channel, 1000V, 13A, 700mΩ@10V
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LONTEN (Longteng Semiconductor)
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SINO-IC (Coslight Core)
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ST (STMicroelectronics)
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Infineon (Infineon)
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This bipolar power transistor is suitable for general purpose amplifier and switching applications. TIP31, TIP31A, TIP31B, TIP31C (NPN); and TIP32, TIP32A, TIP32B, TIP32C (PNP) are complementary devices
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CJ (Jiangsu Changdian/Changjing)
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AGM-Semi (core control source)
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Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 4A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 63mΩ@10V,5A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 11.8nC@10V Input Capacitance (Ciss@Vds): 0.553nF@20V Operating Temperature: -55℃~+150℃@( Tj)
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This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
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N-channel, 600V, 0.3A
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