Triode/MOS tube/transistor/module
This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.
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Voltage VDSS700V, conduction resistance Rds0.72 ohms, charge Qg44nC, current ID10A
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LONTEN (Longteng Semiconductor)
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NPN, Vceo=60V, Ic=5A
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LONTEN (Longteng Semiconductor)
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ISC (Wuxi Solid Electric)
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The FSB50450BS is an advanced Motion SPM 5 module providing a fully featured, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive for built-in MOSFETs (FRFET technology) to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout and temperature monitoring. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open source MOSFET terminals are provided for each phase to support the widest range of control algorithms.
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DIODES (US and Taiwan)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.1/7.5 Continuous Drain Current ID (A) 80
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N-channel, 200V, 25A, 56mΩ@10V
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Slkor (Sakor Micro)
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SILAN (Silan Micro)
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