Triode/MOS tube/transistor/module

P-channel, -60V, -1.6A, 345mΩ@-10V

N-channel, 30V, 254mA, 1.4Ω@4.5V

N-channel, 30V, 150A

Field Effect Transistor (MOSFET) Type: N-channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 170A Power (Pd): 250W On-resistance (RDS(on)@Vgs,Id: 2.3mΩ@ 10V, 40A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 73nC@10V Input Capacitance (Ciss@Vds): 4.14nF@20V , Vds=40V Id=170A Rds =2.3mΩ, working temperature: -55℃~+150℃@(Tj)

This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-223 encapsulation and is suitable for low power surface mount applications.