Triode/MOS tube/transistor/module

IGBT module

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

Industrial Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance.

This complementary N and P-channel MOSFET is designed using an advanced Power Trench process that optimizes RDS(ON) at VGS=2.5V and specifies RDS(ON) at VGS = 1.8V.