Triode/MOS tube/transistor/module
RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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Field Effect Transistor MOSFET N-channel 600V 19A TO-220FP Transistor polarity: N-channel current, Id continuous: 9.5A drain-source voltage, Vds: 600V on resistor RDS(up ): 150mohm Voltage @ Rds Measurement: 10V Threshold Voltage, Vgs th Typical: 3V Power Consumption, Pd: 150W Operating Temperature Min: -55°C Maximum operating temperature: 150°C encapsulation type: TO-220FP Number of pins: 3 SVHC (Substance of Very High Concern): No SVHC (19-Dec-2012) encapsulation/Enclosure: TO-220FP Operating Temperature Range: -55°C to +150°C Transistor Type: Power MOSFET Drain Current, Id Max: 19A Voltage Vgs @ Rds on Measurement: 10V Voltage, Vds Typical: 600V Voltage, Vgs Maximum: 25V Surface Mount Device: Through Hole
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DIODES (US and Taiwan)
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