Triode/MOS tube/transistor/module

These dual N and P channel enhancement mode field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is uniquely suited to minimize on-resistance, providing excellent switching performance. These devices are ideal for low-voltage applications that require fast switching, low in-line power loss, and protection against transients, such as notebook computer power management and other battery-operated circuits.

N-channel, 500V, 3A, 2.4Ω@10V (Note: the original model of this material is STP4NK50Z)