Triode/MOS tube/transistor/module

N-channel, 900V, 5.1A

MOSFETs

Type: 2 N-channel, N-way: Drain-source voltage (Vdss): 60V Continuous drain current (Id): 6.5A On-resistance (RDS(on)@Vgs,Id): 30mΩ@10V, 34mΩ/@ 4.5V, threshold voltage (Vgs(th)@Id): 1.0V to 2.0V VDS=VGS,ID=250μA

NPN, Vceo=20V, Ic=300mA, hfe=350~1200

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±12 Vth(V) 0.4-1.5 On-Resistance RDS(ON) (mΩ) 18/26 Continuous Drain Current ID (A) 5.8

NPN, Vceo=80V, Ic=1A, hfe=100~250

NPN/PNP, Vceo=160V, Ic=200mA; Vceo=-150V, Ic=-200mA

N-channel 40V 10A