Triode/MOS tube/transistor/module

UltraFET devices combine features to deliver benchmark efficiency in power conversion applications. These devices are optimized for Rds(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

This N-channel enhancement mode MOSFET is produced using proprietary high cell density DMOS technology. The product is designed to provide robust, reliable and fast switching performance while minimizing on-resistance. The 2N7002 can be used in most applications requiring up to 400mA DC and can deliver up to 2A pulsed current. This product is especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.