Triode/MOS tube/transistor/module

IGBT module

IGBT module

Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

This N-channel MOSFET is designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.