Triode/MOS tube/transistor/module

110V/1.9A@TC=25℃/ N-channel

Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V

NPN Vceo=45V Ic=100mA

N-CH

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 150V Collector current (Ic): 600mA Power (Pd): 350mW DC current gain (hFE@Ic,Vce): 100@10mA, 5V L range 100-200 PNP, Vceo=-150V, Ic=-0.6A, hfe=100~200

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 11/14 Continuous Drain Current ID (A) 30

PNP 250W -250V- 16A Applications: Designed for high power audio, disk head positioners and other linear applications