Triode/MOS tube/transistor/module

100V/2.3A N-channel

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

NPN, Vo=50V, Io=100mA

Field effect transistor (MOSFET) type: P-channel drain-source voltage (Vdss): 30V continuous drain current (Id): 21A power (Pd): 30W on-resistance (RDS(on)@Vgs,Id): 15mΩ@ 10V, 8A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 14nC@10V Input Capacitance (Ciss@Vds): 1.35nF@15V , Vds=30V Id=21A Rds =15mΩ, working temperature: -55℃~+150℃@(Tj) DFN3*3;

P-channel, -12V, -16A, 21mΩ@-4.5V

N+P channel, 30V, 6.8A+4.6A