Triode/MOS tube/transistor/module

This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

The device is specifically designed as a single-encapsulation solution for battery charging switches in cell phones and other ultra-portable applications. It features a MOSFET with very low on-resistance, and a separately connected low forward voltage Schottky diode for lowest conduction losses. MicroFET 2X2 encapsulation provides excellent thermal performance relative to physical size for linear mode applications.