Triode/MOS tube/transistor/module

This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

P-channel, -60V, -9A, 24mΩ@10V

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 10 VGS(th)(v) 1.8 RDS(ON)(m?)@4.271V 19 Qg(nC)@4.5V 9.4 QgS(nC) 3.9 Qgd(nC) 3 Ciss(pF) 1125 Coss(pF) 132 Crss(pF) 70