Triode/MOS tube/transistor/module

The XS DrMOS family is ON Semiconductor's next generation, fully optimized, ultra-compact integrated MOSFET and driver power stage solution for high current, high frequency, synchronous buck, DC-DC applications. The FDMF6821A integrates a driver IC and a bootstrap Schottky diode within a thermally-managed, ultra-compact 6x6 mm encapsulation. Integrated, this complete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance and power MOSFET RDS(ON). The XS DrMOS family uses ON Semiconductor's high-performance PowerTrench MOSFET technology, which dramatically reduces switching ringing, eliminating the need for snubber circuits found in most buck converter applications. Driver ICs with reduced dead time and propagation delay further enhance performance. The temperature warning feature warns of potential over-temperature conditions. The FDMF6821A incorporates Skip Mode (SMOD#) to improve energy efficiency at light loads. The FDMF6821A also provides a 3-state 3.3 V PWM input, making it compatible with a wide variety of PWM controllers.

IGBT module

IGBT module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is ideal for applications requiring ultra-low rDS(on) in a small space, such as high-performance VRM, POL, and Oring functions.

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω