Triode/MOS tube/transistor/module

Utilizes new field stop 4th generation IGBT technology and is AEC-Q101 qualified. The AFGB30T65SQDN offers optimum performance with low conduction and switching losses for efficient operation in various applications.

This device includes two custom N-channel MOSFETs in a dual encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.

Automotive Power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

Power MOSFET, ~20 V, -3.6 A, Single P-Channel, SOT ~23 ​​encapsulation