Triode/MOS tube/transistor/module

Thyristor (SCR)/module 80A Standard SCRs IT(RMS):80A VGT: 1.5V VDRM VRRM:1600V TJ: -40-125℃

The FDS8842NZ is suitable for minimizing losses in power conversion applications. Simultaneously combined developments in silicon and encapsulation technology provide the lowest rDS(on) while maintaining excellent switching performance.

The MJL3281A and MJL1302A power transistors are suitable for high-power audio, disk head positioners, and other linear applications.

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

P-channel, -20V, -2.9A

N-channel, 60V, 35A, 24mΩ@10V

Power MOSFET -20 V, -8.2 A, Single P-Channel, 2.0x2.0x0.55 mm UDFN encapsulation