Triode/MOS tube/transistor/module

IGBT module

IGBT module

This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.

Suitable for low voltage high speed switching applications and can withstand high energy in avalanche and commutation modes. Source-to-drain diode recovery times are comparable to discrete fast recovery diodes.