Triode/MOS tube/transistor/module

N-channel, 20V, ±7.5A, 11mΩ@4.5V

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 33/40 Continuous Drain Current ID (A) 33

This quad MOSFET solution provides a tenfold improvement in power dissipation compared to a diode bridge.

650V, 80A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 400V Collector current (Ic): 200mA Power (Pd): 750mW Collector cut-off current (Icbo): 100μA Collector-emitter saturation voltage (VCE(sat) @Ic,Ib): 500mV@100mA

N-channel, 400V, 23A, 200mΩ@10V

NPN, 160V, 600mA