Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

This bipolar power transistor is suitable for general purpose amplifier and switching applications. Compact TO-220 AB encapsulation. TIP29, A, B, C (NPN) and TIP30, A, B, C (PNP) are complementary devices.

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

IGBT module

IGBT module