Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 170mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 6Ω@ 10V

Darlington driver, 8-channel (8-ch)

N-channel, VDSS withstand voltage 30V, ID current 70A, RDON on-resistance 5.5mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 115mA Power (Pd): 150mW On-Resistance (RDS(on)@Vgs,Id): 7.5Ω@10V, 500mA Threshold Voltage (Vgs(th)@Id): 1V@250uA N-channel, 60V, 115mA

This N-channel MV MOSFET is produced using the advanced PowerTrench process which incorporates shielded gate technology. This process has been optimized to minimize on-resistance while maintaining the best soft body diode in the industry.